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| inchange semiconductor product specification silicon npn power transistors 2SD1892 description ? ? with to-220fa package ? high dc current gain ? low collector saturation voltage ? darlington ? complement to type 2sb1252 applications ? power amplification ? optimum for 35w high-fidelity output pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i cm collector current-peak 8 a t c =25 ?? 45 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1892 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ; i b =0 100 v v cesat collector-emitter saturation voltage i c =4a ;i b =4ma 2.5 v v besat base-emitter saturation voltage i c =4a ;i b =4ma 3.0 v i cbo collector cut-off current v cb =120v; i e =0 100 | a i ceo collector cut-off current v ce =100v; i b =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =1a ; v ce =5v 2000 h fe -2 dc current gain i c =4a ; v ce =5v 5000 30000 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 2.5 | s t s storage time 3.5 | s t f fall time i c =4a; v cc =50v i b1 =-i b2 =4ma 1.0 | s ? h fe-2 classifications q p 5000-15000 8000-30000 inchange semiconductor product specification 3 silicon npn power transistors 2SD1892 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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